Electron Beam Exposure System Pharos310

Product Overview

Our in-house, controllable electron beam exposure system, the Pharos E310, is designed to write features as small as 40 nm on samples up to 100 mm in diameter. Users can create design image files using editors such as KLAYOUT and AutoCAD, and then realize the processing of micro and nano structures on the Pharos E310 system. 

Basic Information

The basic components of the electron beam lithography system are:

Basic framework

1) Electron beam lithography machine main system
2) Electrical and vacuum control subsystems
3) Pattern generator subsys

annex

1）Laser interferometer (LI-01)
2）4-inch wafer autosampling system (Autoload-01).
3) Uninterruptible power supply UPS (UPS-01).
4) Ion Pump (SIP) Backup Power Supply (SIPB-01)
5) Active and passive damping systems

Application Direction

Uses: The device has high-resolution imaging and measurement functions; It has the function of high-resolution electron beam lithography, which can realize the design and processing of large-area nanoscale devices. 

ELECTRON OPTICAL SYSTEM ：EOS

• Electron source emitter: Thermal field emitter (ZrO/W emitter).

• Accelerating voltage: 0.230 kV

• Lens System:

• Typical: Class 3 electromagnetic lens

• Angle-controllable electromagnetic diaphragm

• Achromatizer: Octapole electromagnetic diffuser

• Minimum spot diameter: 3 nm

• 电子束流：10pA 至 200nA

• Beam stability: The beam can be stable for a long time, the laboratory temperature fluctuation is not more than ±0.2% per hour at ± 0.5°C, and the measured beam stability is not more than +/- 1% within 12 hours.

  Beam position stability: < ± 50 nm/3 hours

• Scanning and rotation function: Yes

• Electron beam beam gate

• Typical: Electrostatic - high-speed type

  frequency：20 MHz

• Deflector: 2-stage scanning magnetic deflection