Ebeam50

Electron Beam Lithography System

Direct-write electron beam lithography system for high-precision micro- and nanofabrication.

Electron-Optical Column

Schottky field-emission electron source with a selectable beam current ranging from 20 pA to 40 nA

Precision Stage

Laser-interferometer positioning with closed-loop correction, supporting a maximum stage travel of 100 mm, with 150 / 200 mm options available.

Pattern Generation & Control

Integrates path planning, proximity-effect correction, autofocus, astigmatism correction, and height measurement into a single software suite.

Key Performance

Parameter

Performance

Minimum Written Linewidth

< 10 nm

Pattern Overlay Accuracy

< ±20 nm

Write-field Stitching Accuracy

< ±20 nm

Maximum Write Field

1000 μm

Acceleration Voltage

50 kV

Electron-beam Current

20 pA–40 nA

Maximum Scan Rate

50 MHz

BEAM & ACCURACY

Fine and Stable


Schottky field emission provides high brightness and low energy spread. The probe remains tightly focused even at low beam current, supporting linewidths below 10 nm and stable long-duration operation.

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