HKNTI CMP systems deliver repeatable planarization and process stability for R&D and pilot production.
0.25 nm
(Within-wafer uniformity)
99.8%
(Process repeatability)
12 inch
(Max wafer size)
Specification
Unit
xCMP-5
Max sample size
inch
4 (custom heads available for special dimensions)
Fixturing method
–
Manual operation
Polishing head pressure
N
≤350 (higher available on request)
Polishing head speed
rpm
≤120 (higher available on request)
Polishing plate speed
rpm
≤120 (higher available on request)
Polishing plate diameter
mm
300
Slurry delivery
mL/min
2 independent lines, ≤200 each (higher available on request)
Configurable gas paths
qty
3–8, set per process
Online monitoring
–
Motor torque · rotation speed · air pressure
Multi-field module
–
Optional: electrochemical / photocatalytic
(Illustrative rendering)
Optional Modules
Electrochemical module
Couples an applied electrical field to the polishing action, aiding controlled material removal on conductive and semiconductive surfaces where mechanical abrasion alone would be too slow or too aggressive.
(Illustrative rendering)
Optional Modules
Photocatalytic module
Introduces light-activated chemistry at the polishing interface, supporting surface reactions that improve finish quality on materials sensitive to purely mechanical processing.
Multi-Zone Pressure Control
The gas distribution plate and rubber diaphragm divide the sample surface into independently pressurized zones, supported by 3–8 configurable gas-path channels per process.
Real-Time Process Monitoring
An integrated online monitoring module tracks motor torque, rotation speed, and air pressure throughout the polishing cycle, so process drift is visible as it happens.
Desktop Footprint, Manual Control
The system's benchtop form factor and manual fixturing keep direct operator control over sample loading — built for labs and small-batch process development, not full production lines.
1. Top Mounting Flange
Secures the polishing head to the Z-axis drive.
2. Gas Channel Plate
Distributes pressurized gas evenly across the diaphragm.
3. Rubber Diaphragm
Provides compliant pressure for uniform polishing.
4. Retaining Ring
Holds the pad and diaphragm securely in place.
5. Polishing Pad
Interface to wafer for material removal.
CMP Polishing Process
Manual Sample Fixturing
Precision Slurry Delivery