Bench-scale precision. Production-grade control.

HKNTI CMP systems deliver repeatable planarization and process stability for R&D and pilot production.

0.25 nm

(Within-wafer uniformity)

99.8%

(Process repeatability)

12 inch

(Max wafer size)

Specification

Unit

xCMP-5

Max sample size

inch

4 (custom heads available for special dimensions)

Fixturing method

Manual operation

Polishing head pressure

N

≤350 (higher available on request)

Polishing head speed

rpm

≤120 (higher available on request)

Polishing plate speed

rpm

≤120 (higher available on request)

Polishing plate diameter

mm

300

Slurry delivery

mL/min

2 independent lines, ≤200 each (higher available on request)

Configurable gas paths

qty

3–8, set per process

Online monitoring

Motor torque · rotation speed · air pressure

Multi-field module

Optional: electrochemical / photocatalytic

(Illustrative rendering)

Optional Modules

Electrochemical module



Couples an applied electrical field to the polishing action, aiding controlled material removal on conductive and semiconductive surfaces where mechanical abrasion alone would be too slow or too aggressive.

(Illustrative rendering)

Optional Modules

Photocatalytic module



Introduces light-activated chemistry at the polishing interface, supporting surface reactions that improve finish quality on materials sensitive to purely mechanical processing.

Multi-Zone Pressure Control

The gas distribution plate and rubber diaphragm divide the sample surface into independently pressurized zones, supported by 3–8 configurable gas-path channels per process.

Real-Time Process Monitoring

An integrated online monitoring module tracks motor torque, rotation speed, and air pressure throughout the polishing cycle, so process drift is visible as it happens.

Desktop Footprint, Manual Control

The system's benchtop form factor and manual fixturing keep direct operator control over sample loading — built for labs and small-batch process development, not full production lines.

1. Top Mounting Flange

Secures the polishing head to the Z-axis drive.




2. Gas Channel Plate

Distributes pressurized gas evenly across the diaphragm.




3. Rubber Diaphragm

Provides compliant pressure for uniform polishing.




4. Retaining Ring

Holds the pad and diaphragm securely in place.




5. Polishing Pad

Interface to wafer for material removal.

CMP Polishing Process

Manual Sample Fixturing

Precision Slurry Delivery

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